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ワイドギャップ半導体β-Ga2O3の遷移金属添加効果
https://cist.repo.nii.ac.jp/records/604
https://cist.repo.nii.ac.jp/records/604862c1e60-6490-4d74-95e2-d50c234717de
名前 / ファイル | ライセンス | アクション |
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ワイドギャップ半導体β-Ga2O3の遷移金属添加効果 (498.6 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2019-07-18 | |||||
タイトル | ||||||
タイトル | ワイドギャップ半導体β-Ga2O3の遷移金属添加効果 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Effect of the transition-metal ions on wide-gap semiconductor β-Ga2O3 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
著者 |
山中, 明生
× 山中, 明生× YAMANAKA, Akio |
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書誌情報 |
千歳科学技術大学フォトニクス研究所紀要 en : Bulletin of Photonics Research Center, Chitose Institute of Science and Technology 巻 1, 号 1, p. 12, 発行日 2011-03-01 |
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出版者 | ||||||
出版者 | 千歳科学技術大学 |